Preparation of SiO_2 ion barrier film with RF magnetron sputtering

射频磁控溅射制备SiO_2防离子反馈膜工艺探讨

Helium-charged Al films are prepared by direct current ( DC ) magnetron sputtering with a He / Ar mixture .

采用氦氩混合气氛下直流磁控溅射沉积方法制备含有氦原子的金属铝膜。

ZnO : Al thin films were prepared on slide glass substrates by non-reactive DC magnetron sputtering at room temperature .

采用直流磁控溅射工艺，室温下在载玻片上制备了氧化锌铝透明导电薄膜。

Effect of the background vacuum degree on the properties of the C / Cr coating deposited by non-equilibrium magnetron sputtering

本底真空度对非平衡磁控溅射C/Cr复合镀层性能的影响非常认真地，非常严肃地

Various Pd films prepared on glass substrates by magnetron sputtering in vacuum or O2 ambience were used as catalysts .

结果表明，在真空气氛下磁控溅射的钯膜上无法生长碳纳米管。